MSC750SMA170S Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.14 EUR |
| 10+ | 10.28 EUR |
| 120+ | 8.95 EUR |
| 510+ | 8.69 EUR |
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Technische Details MSC750SMA170S Microchip Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; SMA, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 4A, Power dissipation: 63W, Case: D3PAK; TO268, On-state resistance: 940mΩ, Mounting: SMD, Gate charge: 18nC, Kind of channel: enhancement, Manufacturer standard package: 30pcs., Pulsed drain current: 12A, Kind of package: tube, Family: SMA.
Weitere Produktangebote MSC750SMA170S nach Preis ab 9.12 EUR bis 11.38 EUR
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MSC750SMA170S | Microchip Technology |
 Description: TRANS SJT 1700V D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 1700 V |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC750SMA170S | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; SMA Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 4A Power dissipation: 63W Case: D3PAK; TO268 On-state resistance: 940mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhancement Manufacturer standard package: 30pcs. Pulsed drain current: 12A Kind of package: tube Family: SMA |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC750SMA170S |
|
Hersteller: Microchip Technology
Description: TRANS SJT 1700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 1700 V
Description: TRANS SJT 1700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 1700 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.38 EUR |
| 25+ | 10.5 EUR |
| 100+ | 9.12 EUR |
| MSC750SMA170S |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4A
Power dissipation: 63W
Case: D3PAK; TO268
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 12A
Kind of package: tube
Family: SMA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 12A; 63W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4A
Power dissipation: 63W
Case: D3PAK; TO268
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 12A
Kind of package: tube
Family: SMA
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)