MSCDC100A120D1PAG Microchip Technology

Description: DIODE MODULE SIC 1200V 100A D1P, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D1P, Current - Average Rectified (Io) (per Diode): 100A, Diode Configuration: 1 Pair Series Connection.