MSCDC150KK120D1PAG Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE MODULE SIC 1200V 150A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 600 µA @ 1200 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 336.93 EUR |
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Technische Details MSCDC150KK120D1PAG Microchip Technology
Description: DIODE MODULE SIC 1200V 150A D1P, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: D1P, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A, Current - Reverse Leakage @ Vr: 600 µA @ 1200 V.
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