MSCDC200A120D1PAG Microchip Technology

Description: DIODE MOD SIC SCHOT 1200V D1P, Current - Reverse Leakage @ Vr: 800 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D1P, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Series Connection, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.