MSCDC200KK120D1PAG Microchip Technology
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 399.85 EUR |
| 100+ | 302.6 EUR |
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Technische Details MSCDC200KK120D1PAG Microchip Technology
Description: DIODE MODULE SIC 1200V 200A D1P, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: D1P, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A, Current - Reverse Leakage @ Vr: 800 µA @ 1200 V.
Weitere Produktangebote MSCDC200KK120D1PAG nach Preis ab 409.92 EUR bis 409.92 EUR
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MSCDC200KK120D1PAG | Hersteller : Microchip Technology |
 Description: DIODE MODULE SIC 1200V 200A D1PPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: D1P Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A Current - Reverse Leakage @ Vr: 800 µA @ 1200 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCDC200KK120D1PAG | Hersteller : MICROCHIP TECHNOLOGY |
MSCDC200KK120D1PAG Diode modules |
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