MSCDC50X1201AG Microchip Technology

Description: PM-DIODE-SIC-SBD-SP1F, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Average Rectified (Io): 50 A, Voltage - Peak Reverse (Max): 1.2 kV, Part Status: Active, Technology: Silicon Carbide Schottky, Operating Temperature: -40°C ~ 175°C (TJ), Diode Type: Three Phase, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.