Technische Details MSCGTQ100HD65C1AG Microchip Technology
Description: PM-IGBT-TFS-SBD~-SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, NTC Thermistor: No, Supplier Device Package: SP1, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Cutoff (Max): 80 A.
Weitere Produktangebote MSCGTQ100HD65C1AG nach Preis ab 218.86 EUR bis 218.86 EUR
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MSCGTQ100HD65C1AG | Microchip Technology |
 Description: PM-IGBT-TFS-SBD~-SP1FPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 80 A |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCGTQ100HD65C1AG |
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Hersteller: Microchip Technology
Description: PM-IGBT-TFS-SBD~-SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 80 A
Description: PM-IGBT-TFS-SBD~-SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 80 A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 218.86 EUR |