MSCM20XM10T3XG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 6N-CH 200V 108A SP3X
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 125°C (TC)
Technology: MOSFET (Metal Oxide)
Power - Max: 341W (Tc)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SP3X
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 291.17 EUR |
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Technische Details MSCM20XM10T3XG Microchip Technology
Description: MOSFET 6N-CH 200V 108A SP3X, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 125°C (TC), Technology: MOSFET (Metal Oxide), Power - Max: 341W (Tc), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V, Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V, Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SP3X, Part Status: Active.
Weitere Produktangebote MSCM20XM10T3XG nach Preis ab 303.6 EUR bis 303.6 EUR
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MSCM20XM10T3XG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-OTHER-SP3X |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCM20XM10T3XG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 84A; SP3X; SiC; screw Case: SP3X Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor On-state resistance: 10mΩ Drain current: 84A Drain-source voltage: 200V |
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