MSCSM120AM042CT6LIAG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1022.24 EUR |
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Technische Details MSCSM120AM042CT6LIAG Microchip Technology
Description: MOSFET 2N-CH 1200V 495A SP6C LI, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Supplier Device Package: SP6C LI, Part Status: Active.
Weitere Produktangebote MSCSM120AM042CT6LIAG nach Preis ab 1196.96 EUR bis 1395.38 EUR
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MSCSM120AM042CT6LIAG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042CT6LIAG | Hersteller : Microchip Technology |
UNRLS CC6293 |
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