MSCSM120DDUM16TBL3NG Microchip Technology

Description: SIC 4N-CH 1200V 150A, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 150A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 560W, Technology: Silicon Carbide (SiC), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 4 N-Channel, Common Source, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.