MSCSM120SKM11CT3AG Microchip Technology
Hersteller: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 280.56 EUR |
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Technische Details MSCSM120SKM11CT3AG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB, Topology: buck chopper; NTC thermistor, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: SiC, Semiconductor structure: SiC diode/transistor, Case: SP3F, On-state resistance: 10.4mΩ, Drain current: 202A, Pulsed drain current: 500A, Power dissipation: 1067W, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSCSM120SKM11CT3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSCSM120SKM11CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Topology: buck chopper; NTC thermistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Case: SP3F On-state resistance: 10.4mΩ Drain current: 202A Pulsed drain current: 500A Power dissipation: 1067W Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSCSM120SKM11CT3AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
Produkt ist nicht verfügbar |
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| MSCSM120SKM11CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Topology: buck chopper; NTC thermistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Case: SP3F On-state resistance: 10.4mΩ Drain current: 202A Pulsed drain current: 500A Power dissipation: 1067W Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |