MSCSM170AM039CD3AG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 1700V 523A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.4kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1566.77 EUR |
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Technische Details MSCSM170AM039CD3AG Microchip Technology
Description: MOSFET 2N-CH 1700V 523A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.4kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 523A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V, Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V, Vgs(th) (Max) @ Id: 3.3V @ 22.5mA, Part Status: Active.
Weitere Produktangebote MSCSM170AM039CD3AG nach Preis ab 1807.27 EUR bis 2388.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCSM170AM039CD3AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM039CD3AG | Hersteller : Microchip Technology |
PM-MOSFET-SIC-SBD-D3 |
Produkt ist nicht verfügbar |