MSCSM70AM07CT3AG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 407.56 EUR |
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Technische Details MSCSM70AM07CT3AG Microchip Technology
Description: MOSFET 2N-CH 700V 353A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 988W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 353A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V, Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 12mA, Supplier Device Package: SP3F.
Weitere Produktangebote MSCSM70AM07CT3AG nach Preis ab 612.06 EUR bis 650.23 EUR
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MSCSM70AM07CT3AG | Hersteller : Microchip Technology |
 Description: MOSFET 2N-CH 700V 353A SP3FPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Supplier Device Package: SP3F |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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MSCSM70AM07CT3AG | Hersteller : Microchip Technology / Atmel |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
auf Bestellung 3 Stücke: Lieferzeit 311-315 Tag (e) |
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| MSCSM70AM07CT3AG | Hersteller : Microchip Technology |
Phase Leg Sic Mosfet Power Module |
Produkt ist nicht verfügbar |
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| MSCSM70AM07CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 6.4mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 281A Pulsed drain current: 700A Power dissipation: 988W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM70AM07CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Case: SP3F Electrical mounting: Press-in PCB On-state resistance: 6.4mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 281A Pulsed drain current: 700A Power dissipation: 988W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor |
Produkt ist nicht verfügbar |