Technische Details MSCSM70HM038AG Microchip Technology
Description: SIC 4N-CH 700V 464A, Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 464A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 1.277kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Vgs(th) (Max) @ Id: 2.4V @ 16mA.
Weitere Produktangebote MSCSM70HM038AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| MSCSM70HM038AG | Microchip Technology |
 Description: SIC 4N-CH 700V 464AGate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1.277kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 16mA |
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Im Einkaufswagen Stück im Wert von UAH |
| MSCSM70HM038AG |
|
Hersteller: Microchip Technology
Description: SIC 4N-CH 700V 464A
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.277kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Description: SIC 4N-CH 700V 464A
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.277kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH