MSCSM70HM19T3AG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 700V 124A
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 365W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details MSCSM70HM19T3AG Microchip Technology
Description: MOSFET 4N-CH 700V 124A, Part Status: Active, Vgs(th) (Max) @ Id: 2.4V @ 4mA, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 365W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM70HM19T3AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F |
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