MSE07PBHM3/89A Vishay General Semiconductor
auf Bestellung 12158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.20 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 4500+ | 0.10 EUR |
| 9000+ | 0.08 EUR |
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Technische Details MSE07PBHM3/89A Vishay General Semiconductor
Description: DIODE GP 100V 700MA MICROSMP, Packaging: Tape & Reel (TR), Package / Case: MicroSMP, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 780 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Current - Average Rectified (Io): 700mA, Supplier Device Package: MicroSMP (DO-219AD), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V.
Weitere Produktangebote MSE07PBHM3/89A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MSE07PBHM3/89A | Hersteller : Vishay Semiconductors |
 Rectifiers 0.7A, 100V, ESD PROTECTION, SM RECT |
auf Bestellung 26085 Stücke: Lieferzeit 10-14 Tag (e) |
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MSE07PBHM3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 700MA MICROSMP Packaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
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MSE07PBHM3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 700MA MICROSMP Packaging: Cut Tape (CT) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |