MSE1PJ-M3/89A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Technische Details MSE1PJ-M3/89A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO219AD, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 780 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote MSE1PJ-M3/89A nach Preis ab 0.062 EUR bis 0.25 EUR
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MSE1PJ-M3/89A | Vishay General Semiconductor |
Rectifiers 1.0 Amp 600 Volt 20 Amp IFSM |
auf Bestellung 52432 Stücke: Lieferzeit 10-14 Tag (e) |
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MSE1PJ-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO219AD Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Cut Tape (CT) |
auf Bestellung 373500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSE1PJ-M3/89A |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 600 Volt 20 Amp IFSM
Rectifiers 1.0 Amp 600 Volt 20 Amp IFSM
auf Bestellung 52432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 0.21 EUR |
| 18+ | 0.16 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.067 EUR |
| 2500+ | 0.062 EUR |
| MSE1PJ-M3/89A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO219AD
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 1A DO219AD
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
auf Bestellung 373500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 96+ | 0.18 EUR |
| 116+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.073 EUR |
| 2000+ | 0.068 EUR |