MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
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Technische Details MSE1PJHM3J/89A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: MicroSMP (DO-219AD), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 780 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: MicroSMP, Packaging: Tape & Reel (TR).
Weitere Produktangebote MSE1PJHM3J/89A nach Preis ab 0.84 EUR bis 2.04 EUR
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MSE1PJHM3J/89A | Vishay General Semiconductor |
Rectifiers 1.0A, 600V, ESD PROTECTION, SM |
auf Bestellung 5188 Stücke: Lieferzeit 10-14 Tag (e) |
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MSE1PJHM3J/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A MICROSMP Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: MicroSMP (DO-219AD) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: MicroSMP Packaging: Cut Tape (CT) |
auf Bestellung 26335 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSE1PJHM3J/89A |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1.0A, 600V, ESD PROTECTION, SM
Rectifiers 1.0A, 600V, ESD PROTECTION, SM
auf Bestellung 5188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.4 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.87 EUR |
| MSE1PJHM3J/89A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A MICROSMP
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
auf Bestellung 26335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.84 EUR |