MSJP20N65A-BP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
auf Bestellung 30002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.53 EUR |
| 50+ | 4.37 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 2.85 EUR |
| 2000+ | 2.68 EUR |
| 5000+ | 2.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MSJP20N65A-BP Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-220AB(H), Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 151W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V.
Weitere Produktangebote MSJP20N65A-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSJP20N65A-BP | Hersteller : Micro Commercial Components |
MSJP20N65A-BP |
Produkt ist nicht verfügbar |
||
| MSJP20N65A-BP | Hersteller : Micro Commercial Components (MCC) |
MOSFET |
Produkt ist nicht verfügbar |