MSJUFR05N65-TP Micro Commercial Co

Description: MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 57W (Tj), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).