MSMBJ12CAE3

MSMBJ12CAE3 Microchip Technology


RF01000-1594034.pdf Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes TVS 12V 5% 600W bi
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Technische Details MSMBJ12CAE3 Microchip Technology

Description: TVS DIODE 12VWM 19.9VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 30.2A, Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 13.3V, Voltage - Clamping (Max) @ Ipp: 19.9V, Power - Peak Pulse: 600W, Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.

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MSMBJ12CAE3 Hersteller : MICROSEMI 10560-msmb-datasheet SMBJ/600WATT TRANSIENT VOLTAGE SUPPRESSOR MSMBJ12
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MSMBJ12CAE3 MSMBJ12CAE3 Hersteller : Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 12VWM 19.9VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.2A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar