MSMBJ16AE3 MICROSEMI
Hersteller: MICROSEMI
SMBJ/600WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR MSMBJ16
Anzahl je Verpackung: 1 Stücke
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Technische Details MSMBJ16AE3 MICROSEMI
Description: TVS DIODE 16VWM 26VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 23.1A, Voltage - Reverse Standoff (Typ): 16V, Supplier Device Package: SMBJ (DO-214AA), Unidirectional Channels: 1, Voltage - Breakdown (Min): 17.8V, Voltage - Clamping (Max) @ Ipp: 26V, Power - Peak Pulse: 600W, Power Line Protection: No, Part Status: Active.
Weitere Produktangebote MSMBJ16AE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MSMBJ16AE3 | Microchip Technology |
Description: TVS DIODE 16VWM 26VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.1A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MSMBJ16AE3 | Microchip Technology |
ESD Suppressors / TVS Diodes TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MSMBJ16AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 17.8V; 23.1A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Operating temperature: -65...150°C Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSMBJ16AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 16VWM 26VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ16AE3 |
|
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes TVS
ESD Suppressors / TVS Diodes TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ16AE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8V; 23.1A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8V; 23.1A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Operating temperature: -65...150°C
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH