MSMBJ30CAE3 Microchip Technology
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 100+ | 1.69 EUR |
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Technische Details MSMBJ30CAE3 Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 12.4A, Voltage - Reverse Standoff (Typ): 30V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 33.3V, Voltage - Clamping (Max) @ Ipp: 48.4V, Power - Peak Pulse: 600W, Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMBJ30CAE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSMBJ30CAE3 | Hersteller : Microchip Technology |
 TVS Diode Single Bi-Dir 30V 600W 2-Pin SMB Bag |
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| MSMBJ30CAE3 | Hersteller : MICROSEMI |
SMBJ/TRANSIENT VOLTAGE SUPPRESSOR Anzahl je Verpackung: 1 Stücke |
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MSMBJ30CAE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |