Technische Details MSMBJ33AE3 MICROSEMI
Description: TVS DIODE 33VWM 53.3VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 11.3A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: DO-214AA (SMBJ), Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMBJ33AE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MSMBJ33AE3 | Microchip Technology |
 Description: TVS DIODE 33VWM 53.3VC SMBJPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MSMBJ33AE3 | Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 33V 5% 600W uni |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MSMBJ33AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7V; 11.3A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSMBJ33AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 33VWM 53.3VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ33AE3 |
|
Hersteller: Microchip Technology
ESD Protection Diodes / TVS Diodes TVS 33V 5% 600W uni
ESD Protection Diodes / TVS Diodes TVS 33V 5% 600W uni
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ33AE3 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.3A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.3A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH