MSMBJ51A MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
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Technische Details MSMBJ51A MDE Semiconductor Inc
Description: TVS DIODE 51VWM 82.4VC DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 7.3A, Voltage - Reverse Standoff (Typ): 51V, Supplier Device Package: DO-214AA (SMB), Unidirectional Channels: 1, Voltage - Breakdown (Min): 56.7V, Voltage - Clamping (Max) @ Ipp: 82.4V, Power - Peak Pulse: 600W, Power Line Protection: No.
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MSMBJ51A | Hersteller : MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA Tolerance: ±5% |
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