MSMBJ8.5CAe3 Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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Technische Details MSMBJ8.5CAe3 Microchip Technology
Description: TVS DIODE 8.5VWM 14.4V DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 41.7A, Voltage - Reverse Standoff (Typ): 8.5V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 9.44V, Voltage - Clamping (Max) @ Ipp: 14.4V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMBJ8.5CAe3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MSMBJ8.5CAe3 | Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 8.5V 5% 600W bi |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MSMBJ8.5CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 9.44V; 41.7A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MSMBJ8.5CAe3 |
|
Hersteller: Microchip Technology
ESD Protection Diodes / TVS Diodes TVS 8.5V 5% 600W bi
ESD Protection Diodes / TVS Diodes TVS 8.5V 5% 600W bi
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MSMBJ8.5CAe3 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44V; 41.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44V; 41.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH