MSMCJ10AE3 Microchip Technology
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 500+ | 2.24 EUR |
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Technische Details MSMCJ10AE3 Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 88.2A, Voltage - Reverse Standoff (Typ): 10V, Supplier Device Package: DO-214AB (SMCJ), Unidirectional Channels: 1, Voltage - Breakdown (Min): 11.1V, Voltage - Clamping (Max) @ Ipp: 17V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMCJ10AE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSMCJ10AE3 | Hersteller : Microsemi |
 ESD Suppressors / TVS Diodes Uni-Directional TVS |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSMCJ10AE3 | Hersteller : MICROSEMI |
DO-214AB/1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE MSMCJ10 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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.jpg "MSMCJ10AE3") |
MSMCJ10AE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 88.2A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |