
MSMCJ30CAE3 Microchip Technology
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Technische Details MSMCJ30CAE3 Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 31A, Voltage - Reverse Standoff (Typ): 30V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 33.3V, Voltage - Clamping (Max) @ Ipp: 48.4V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMCJ30CAE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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MSMCJ30CAE3 | Hersteller : MICROSEMI |
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MSMCJ30CAE3 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMCJ30CAE3 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |