MSMCJLCE51Ae3 Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO214AB
Current - Peak Pulse (10/1000µs): 18.2A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 51V
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Technische Details MSMCJLCE51Ae3 Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO214AB, Current - Peak Pulse (10/1000µs): 18.2A, Capacitance @ Frequency: 100pF @ 1MHz, Applications: General Purpose, Operating Temperature: -65°C ~ 150°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Bulk, Part Status: Active, Power Line Protection: No, Power - Peak Pulse: 1500W (1.5kW), Voltage - Clamping (Max) @ Ipp: 82.4V, Voltage - Breakdown (Min): 56.7V, Unidirectional Channels: 1, Supplier Device Package: DO-214AB (SMCJ), Voltage - Reverse Standoff (Typ): 51V.
Weitere Produktangebote MSMCJLCE51Ae3
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|---|---|---|---|---|---|
|
MSMCJLCE51Ae3 | Microsemi |
ESD Suppressors / TVS Diodes Transient Voltage Suppressor |
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Hersteller: Microsemi
ESD Suppressors / TVS Diodes Transient Voltage Suppressor
ESD Suppressors / TVS Diodes Transient Voltage Suppressor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

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