MSMLJ12CAE3 Microchip Technology
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Technische Details MSMLJ12CAE3 Microchip Technology
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB, Mounting: SMD, Type of diode: TVS, Leakage current: 5µA, Tolerance: ±5%, Max. off-state voltage: 12V, Breakdown voltage: 14V, Max. forward impulse current: 150.6A, Peak pulse power dissipation: 3kW, Semiconductor structure: bidirectional, Case: DO214AB.
Weitere Produktangebote MSMLJ12CAE3
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MSMLJ12CAe3 | Hersteller : Microchip Technology |
 Description: TVS DIODE 12VWM 19.9VC DO214AB |
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MSMLJ12CAe3 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 12V 5% 3000W bi |
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MSMLJ12CAe3 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Mounting: SMD Type of diode: TVS Leakage current: 5µA Tolerance: ±5% Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Peak pulse power dissipation: 3kW Semiconductor structure: bidirectional Case: DO214AB |
Produkt ist nicht verfügbar |