MSMLJ12CAE3 Microchip Technology
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Technische Details MSMLJ12CAE3 Microchip Technology
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 12V, Breakdown voltage: 14V, Max. forward impulse current: 150.6A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSMLJ12CAE3
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MSMLJ12CAe3 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMLJ12CAe3 | Hersteller : Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO214AB |
Produkt ist nicht verfügbar |
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MSMLJ12CAe3 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 12V 5% 3000W bi |
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MSMLJ12CAe3 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA |
Produkt ist nicht verfügbar |