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MSMLJ40CAE3 Microchip Technology
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.84 EUR |
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Technische Details MSMLJ40CAE3 Microchip Technology
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 40V, Breakdown voltage: 46.8V, Max. forward impulse current: 46.4A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 2µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSMLJ40CAE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MSMLJ40CAE3 | Hersteller : Microsemi |
 ESD Suppressors / TVS Diodes Bi-Directional TVS |
auf Bestellung 61 Stücke: Lieferzeit 14-28 Tag (e) |
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| MSMLJ40CAE3 | Hersteller : MICROSEMI |
DO-214AB/3000 W, BIDIRECTIONAL, SILICON, TVS DIODE MSMLJ40 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-21 Tag (e) |
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MSMLJ40CAE3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMLJ40CAE3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
Produkt ist nicht verfügbar |