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MSMLJ45Ae3 Microchip Technology
Hersteller: Microchip TechnologyDescription: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.01 EUR |
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Technische Details MSMLJ45Ae3 Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 41.2A, Voltage - Reverse Standoff (Typ): 45V, Supplier Device Package: DO-214AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 50V, Voltage - Clamping (Max) @ Ipp: 72.7V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No, Part Status: Active.
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Verfügbarkeit |
Preis ohne MwSt |
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MSMLJ45Ae3 | Hersteller : Microsemi |
ESD Suppressors / TVS Diodes Uni-Directional TVS |
auf Bestellung 390 Stücke: Lieferzeit 14-28 Tag (e) |
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MSMLJ45Ae3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MSMLJ45Ae3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
Produkt ist nicht verfügbar |