MSMLJ54CAE3 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
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Technische Details MSMLJ54CAE3 MICROCHIP (MICROSEMI)
Description: TVS DIODE 54VWM 87.1VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 34.4A, Voltage - Reverse Standoff (Typ): 54V, Supplier Device Package: DO-214AB, Bidirectional Channels: 1, Voltage - Breakdown (Min): 60V, Voltage - Clamping (Max) @ Ipp: 87.1V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No.
Weitere Produktangebote MSMLJ54CAE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSMLJ54CAE3 | Hersteller : MICROSEMI |
DO-214AB/3000 W, BIDIRECTIONAL, SILICON, TVS DIODE MSMLJ54 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSMLJ54CAE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.4A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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MSMLJ54CAE3 | Hersteller : Microsemi |
ESD Suppressors / TVS Diodes Bi-Directional TVS |
Produkt ist nicht verfügbar |
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MSMLJ54CAE3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: bidirectional Mounting: SMD Max. forward impulse current: 34.4A Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 54V Breakdown voltage: 63.2V |
Produkt ist nicht verfügbar |