MSR2N3700UB/TR Microchip Technology

Description: RH SMALL-SIGNAL BJT, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR).