MSS1P4HM3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 4500+ | 0.097 EUR |
| 9000+ | 0.089 EUR |
| 13500+ | 0.085 EUR |
| 22500+ | 0.08 EUR |
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Technische Details MSS1P4HM3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 200 µA @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote MSS1P4HM3_A/H nach Preis ab 0.083 EUR bis 0.39 EUR
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MSS1P4HM3_A/H | Vishay General Semiconductor |
Schottky Diodes & Rectifiers 1A 40V SM Schottky Rect |
auf Bestellung 41737 Stücke: Lieferzeit 10-14 Tag (e) |
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MSS1P4HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMP Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 50pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD |
auf Bestellung 30435 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSS1P4HM3_A/H |
|
Hersteller: Vishay General Semiconductor
Schottky Diodes & Rectifiers 1A 40V SM Schottky Rect
Schottky Diodes & Rectifiers 1A 40V SM Schottky Rect
auf Bestellung 41737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.11 EUR |
| 2500+ | 0.1 EUR |
| 9000+ | 0.084 EUR |
| 22500+ | 0.083 EUR |
| MSS1P4HM3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
auf Bestellung 30435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 68+ | 0.26 EUR |
| 101+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |