MSS1P6-E3/89A
Hersteller: auf Bestellung 200000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MSS1P6-E3/89A
Description: DIODE SCHOTTKY 60V 1A DO219AD, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 60 V.
Weitere Produktangebote MSS1P6-E3/89A
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MSS1P6-E3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219AD Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
Produkt ist nicht verfügbar |
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MSS1P6-E3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219AD Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
Produkt ist nicht verfügbar |