MSS1P6HM3/89A
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auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MSS1P6HM3/89A
Description: DIODE SCHOTTKY 60V 1A DO219AD, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 150 µA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 60 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AD (MicroSMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AD, Packaging: Tape & Reel (TR).
Weitere Produktangebote MSS1P6HM3/89A
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MSS1P6HM3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219AD Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Tape & Reel (TR) |
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