| Anzahl | Preis |
|---|---|
| 1+ | 20.49 EUR |
| 10+ | 18.9 EUR |
| 25+ | 18.57 EUR |
| 50+ | 18.22 EUR |
| 100+ | 16.77 EUR |
| 250+ | 16.1 EUR |
| 500+ | 15.95 EUR |
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Technische Details MT46H64M32LFBQ-48 AIT:C Micron
Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA, Packaging: Bulk, Package / Case: 90-VFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 208 MHz, Memory Format: DRAM, Supplier Device Package: 90-VFBGA (8x13), Grade: Automotive, Write Cycle Time - Word, Page: 14.4ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 64M x 32, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Weitere Produktangebote MT46H64M32LFBQ-48 AIT:C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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MT46H64M32LFBQ-48 AIT:C | Micron Technology Inc. |
 Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGAPackaging: Bulk Package / Case: 90-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 90-VFBGA (8x13) Grade: Automotive Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 64M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1440 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MT46H64M32LFBQ-48 AIT:C |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA
Packaging: Bulk
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA
Packaging: Bulk
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1440 Stücke
Im Einkaufswagen
Stück im Wert von UAH