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MT46H64M32LFBQ-48 WT:C TR

MT46H64M32LFBQ-48 WT:C TR Micron Technology Inc.

t89m_auto_lpddr.pdf Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA
Packaging: Cut Tape (CT)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 32
DigiKey Programmable: Not Verified
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100+18.19 EUR
250+17.34 EUR
500+16.73 EUR
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Technische Details MT46H64M32LFBQ-48 WT:C TR Micron Technology Inc.

Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA, Packaging: Tape & Reel (TR), Package / Case: 90-VFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 208 MHz, Memory Format: DRAM, Supplier Device Package: 90-VFBGA (8x13), Write Cycle Time - Word, Page: 14.4ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 64M x 32, DigiKey Programmable: Not Verified.

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MT46H64M32LFBQ-48 WT:C TR MT46H64M32LFBQ-48 WT:C TR Hersteller : Micron Technology Inc. t89m_auto_lpddr.pdf Description: IC DRAM 2GBIT PAR 208MHZ 90VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (8x13)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 64M x 32
DigiKey Programmable: Not Verified
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MT46H64M32LFBQ-48 WT:C TR MT46H64M32LFBQ-48 WT:C TR Hersteller : Micron ddr_mobile_sdram_only_152b_omap_pop-1879937.pdf DRAM MOBILE DDR 2G 64MX32 FBGA
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