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Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.23 EUR |
10+ | 6.56 EUR |
100+ | 5.74 EUR |
250+ | 5.72 EUR |
500+ | 5.49 EUR |
1000+ | 5.26 EUR |
10000+ | 4.98 EUR |
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Technische Details MT47H32M16NF-25E:H TR Micron
Description: IC DRAM 512MBIT PARALLEL 84FBGA, Packaging: Tape & Reel (TR), Package / Case: 84-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 84-FBGA (8x12.5), Grade: Automotive, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 400 ps, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Weitere Produktangebote MT47H32M16NF-25E:H TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MT47H32M16NF-25E:H TR | Hersteller : Micron Technology | DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA T/R |
Produkt ist nicht verfügbar |
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MT47H32M16NF-25E:H TR | Hersteller : Micron Technology | DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA T/R |
Produkt ist nicht verfügbar |
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MT47H32M16NF-25E:H TR | Hersteller : Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Tape & Reel (TR) Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT47H32M16NF-25E:H TR | Hersteller : Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Cut Tape (CT) Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |