| Anzahl | Preis |
|---|---|
| 1+ | 117.55 EUR |
| 10+ | 108.47 EUR |
| 25+ | 104.91 EUR |
| 50+ | 102.29 EUR |
| 100+ | 99.72 EUR |
| 250+ | 99.69 EUR |
| 500+ | 99.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MT53E1G32D2FW-046 WT:B TR Micron
Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tape & Reel (TR), Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote MT53E1G32D2FW-046 WT:B TR nach Preis ab 261.75 EUR bis 301.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MT53E1G32D2FW-046 WT:B TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Cut Tape (CT) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 1747 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MT53E1G32D2FW-046 WT:B TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 1747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 301.68 EUR |
| 10+ | 277.81 EUR |
| 25+ | 268.58 EUR |
| 50+ | 261.75 EUR |

