MTB30P06VT4G ON

Description: MOSFET P-CH 60V 30A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).