Technische Details MTB30P06VT4G ON
Description: MOSFET P-CH 60V 30A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote MTB30P06VT4G nach Preis ab 3.16 EUR bis 3.16 EUR
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MTB30P06VT4G Produktcode: 34638
zu Favoriten hinzufügen
Lieblingsprodukt
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ON |
 Transistoren > Transistoren P-Kanal-FeldGehäuse: D-Pak Uds,V: 60 Id,A: 30 Rds(on),Om: 0.80 Ciss, pF/Qg, nC: 1562/26 /: SMD |
Produkt ist nicht verfügbar
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MTB30P06VT4G | onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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MTB30P06VT4G | onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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MTB30P06VT4G | onsemi |
MOSFET PFET D2PAK 60V 30A 80mOhm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MTB30P06VT4G Produktcode: 34638
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: ON
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: D-Pak
Uds,V: 60
Id,A: 30
Rds(on),Om: 0.80
Ciss, pF/Qg, nC: 1562/26
/: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: D-Pak
Uds,V: 60
Id,A: 30
Rds(on),Om: 0.80
Ciss, pF/Qg, nC: 1562/26
/: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 3.16 EUR |
| MTB30P06VT4G |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTB30P06VT4G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTB30P06VT4G |
|
Hersteller: onsemi
MOSFET PFET D2PAK 60V 30A 80mOhm
MOSFET PFET D2PAK 60V 30A 80mOhm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH