Technische Details MTB30P06VT4G ON
Description: MOSFET P-CH 60V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V.
Weitere Produktangebote MTB30P06VT4G
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MTB30P06VT4G Produktcode: 34638 |
Hersteller : ON |
 Transistoren > Transistoren P-Kanal-FeldGehäuse: D-Pak Uds,V: 60 Id,A: 30 Rds(on),Om: 0.80 Ciss, pF/Qg, nC: 1562/26 /: SMD |
Produkt ist nicht verfügbar
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MTB30P06VT4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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MTB30P06VT4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
Produkt ist nicht verfügbar |
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MTB30P06VT4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
Produkt ist nicht verfügbar |
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MTB30P06VT4G | Hersteller : onsemi |
MOSFET PFET D2PAK 60V 30A 80mOhm |
Produkt ist nicht verfügbar |