MTB50P03HDLT4
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auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MTB50P03HDLT4
Description: MOSFET P-CH 30V 50A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Cut Tape (CT).
Weitere Produktangebote MTB50P03HDLT4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MTB50P03HDLT4 | onsemi |
Description: MOSFET P-CH 30V 50A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MTB50P03HDLT4 | onsemi |
MOSFETs 30V 50A Logic Level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MTB50P03HDLT4 |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTB50P03HDLT4 |
|
Hersteller: onsemi
MOSFETs 30V 50A Logic Level
MOSFETs 30V 50A Logic Level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH