MTB50P03HDLT4G onsemi

Description: MOSFET P-CH 30V 50A D2PAK, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).