MTD10N10ELT4 onsemi

Description: MOSFET N-CH 100V 10A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.75W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).