MTD2N50E1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - MTD2N50E1 - TRANS MOSFET N-CH 500V 2A RAIL
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details MTD2N50E1 ONSEMI
Description: TRANS MOSFET N-CH 500V 2A RAIL, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote MTD2N50E1 nach Preis ab 0.55 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| MTD2N50E1 | Motorola |
Description: TRANS MOSFET N-CH 500V 2A RAIL Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
auf Bestellung 83920 Stücke: Lieferzeit 10-14 Tag (e) |
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| MTD2N50E-1 |
auf Bestellung 2925 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||
| MTD2N50E1 |
|
auf Bestellung 100668 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MTD2N50E1 |
|
Hersteller: Motorola
Description: TRANS MOSFET N-CH 500V 2A RAIL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: TRANS MOSFET N-CH 500V 2A RAIL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 83920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1158+ | 0.55 EUR |
| MTD2N50E-1 |
auf Bestellung 2925 Stücke:
Lieferzeit 21-28 Tag (e)
| MTD2N50E1 |
|
auf Bestellung 100668 Stücke:
Lieferzeit 21-28 Tag (e)