MTM761110LBF

MTM761110LBF Panasonic Electronic Components


MTM761110LBF_DS.pdf Hersteller: Panasonic Electronic Components
Description: MOSFET P-CH 12V 4A WSMINI6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: WSMini6-F1-B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
auf Bestellung 1829 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 22
Produktrezensionen
Produktbewertung abgeben

Technische Details MTM761110LBF Panasonic Electronic Components

Description: MOSFET P-CH 12V 4A WSMINI6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: WSMini6-F1-B, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V.

Weitere Produktangebote MTM761110LBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MTM761110LBF MTM761110LBF Hersteller : Panasonic MTM761110LBF_E-1142420.pdf MOSFET PCH MOS FET FLT LD 2.0x2.1mm
auf Bestellung 2184 Stücke:
Lieferzeit 14-28 Tag (e)
MTM761110LBF MTM761110LBF Hersteller : Panasonic Electronic Components MTM761110LBF_DS.pdf Description: MOSFET P-CH 12V 4A WSMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: WSMini6-F1-B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Produkt ist nicht verfügbar