MTP10N10ELG
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Lieferzeit 21-28 Tag (e)
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Technische Details MTP10N10ELG
Description: MOSFET N-CH 100V 10A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.75W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Supplier Device Package: TO-220.
Weitere Produktangebote MTP10N10ELG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MTP10N10ELG | onsemi |
Description: MOSFET N-CH 100V 10A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Supplier Device Package: TO-220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MTP10N10ELG | onsemi |
MOSFETs 100V 10A Logic Level N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MTP10N10ELG |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220
Description: MOSFET N-CH 100V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTP10N10ELG |
|
Hersteller: onsemi
MOSFETs 100V 10A Logic Level N-Channel
MOSFETs 100V 10A Logic Level N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH