MTY25N60E onsemi
Hersteller: onsemiDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 210mOhm @ 12.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10220 pF @ 25 V
auf Bestellung 1306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 49+ | 9.98 EUR |
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Technische Details MTY25N60E onsemi
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A, Rds On (Max) @ Id, Vgs: 210mOhm @ 12.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10220 pF @ 25 V.
Weitere Produktangebote MTY25N60E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MTY25N60E |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MTY25N60E | Hersteller : ONSEMI |
Description: ONSEMI - MTY25N60E - MOSFET, N TO-264 tariffCode: 85412900 euEccn: NLR hazardous: false productTraceability: Yes-Date/Lot Code usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |