MUBW25-06A6K IXYS
Hersteller: IXYS
Description: IGBT MODULE 600V 31A 100W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MODULE 600V 31A 100W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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Technische Details MUBW25-06A6K IXYS
Description: IGBT MODULE 600V 31A 100W E1, Packaging: Box, Package / Case: E1, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, NTC Thermistor: Yes, Supplier Device Package: E1, IGBT Type: NPT, Current - Collector (Ic) (Max): 31 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 100 W, Current - Collector Cutoff (Max): 600 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.
Weitere Produktangebote MUBW25-06A6K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MUBW25-06A6K | Hersteller : IXYS |
 Discrete Semiconductor Modules 25 Amps 600V |
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| MUBW25-06A6K | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of semiconductor module: IGBT Application: motors Technology: NPT Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB |
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